Direct Probing of Gap States and Their Passivation in Halide Perovskites by High-Sensitivity, Variable Energy Ultraviolet Photoelectron Spectroscopy

نویسندگان

چکیده

Direct detection of intrinsic defects in halide perovskites (HaPs) by standard methods utilizing optical excitation is quite challenging, due to the low density most samples this family materials (≤1015 cm–3 polycrystalline thin films and ≤1011 single crystals, except melt-grown ones). While several electrical can detect defect densities <1015 cm–3, such as deep level transient spectroscopy (DLTS) or thermally stimulated current (TSC), they require preparation ohmic and/or rectifying contacts sample, which not only poses a challenge itself case HaPs but also may create at contact–HaP interface introduce extrinsic into HaP. Here, we show that low-energy photoelectron measurements be used obtain directly energy position gap states Br-based wide-bandgap (Eg > 2 eV) HaPs. By measuring HaP layers on both hole- electron-contact layers, well crystals without contacts, conclude observed are HaP, propose passivation route via incorporation 2D-forming ligand precursor solution.

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ژورنال

عنوان ژورنال: Journal of Physical Chemistry C

سال: 2021

ISSN: ['1932-7455', '1932-7447']

DOI: https://doi.org/10.1021/acs.jpcc.0c11627